Achieves World’s Largest Capacity of 1.5TB in a Single Package with BiCS FLASH™ chip
TOKYO, June 28 (Bernama-BUSINESS WIRE) -- Toshiba Memory Corporation, the world leader in memory solutions, today announced development of the world’s first[1] BiCS FLASH™ three-dimensional (3D) flash memory[2] with a stacked cell structure. The newest BiCS FLASH™ device is the first to deliver 4-bit-per-cell (quadruple-level cell, QLC) technology, advancing capacity beyond that of triple-level cell (TLC) devices and pushing the boundaries of flash memory technology.
Multi-bit cell flash memories store data by managing the number of electrons in each individual memory cell. Achieving QLC technology posed a series of technical challenges, as increasing the number of bit-per-cell by one within same electron count requires twice the accuracy of TLC technology. Toshiba Memory has drawn on its advanced circuit design capabilities and industry-leading 64-layer 3D flash memory process technology to create the QLC 3D flash memory.
TOKYO, June 28 (Bernama-BUSINESS WIRE) -- Toshiba Memory Corporation, the world leader in memory solutions, today announced development of the world’s first[1] BiCS FLASH™ three-dimensional (3D) flash memory[2] with a stacked cell structure. The newest BiCS FLASH™ device is the first to deliver 4-bit-per-cell (quadruple-level cell, QLC) technology, advancing capacity beyond that of triple-level cell (TLC) devices and pushing the boundaries of flash memory technology.
Multi-bit cell flash memories store data by managing the number of electrons in each individual memory cell. Achieving QLC technology posed a series of technical challenges, as increasing the number of bit-per-cell by one within same electron count requires twice the accuracy of TLC technology. Toshiba Memory has drawn on its advanced circuit design capabilities and industry-leading 64-layer 3D flash memory process technology to create the QLC 3D flash memory.
No comments:
Post a Comment