KUALA LUMPUR, June 13 (Bernama) -- Toshiba Electronic Devices & Storage Corporation (Toshiba) has expanded its line-up of N-channel power MOSFETs fabricated with the latest-generation process, with a 600 volt (V) super junction structure.
According to Toshiba in a statement, it is suitable for data centres, switching power supplies, and power conditioners for photovoltaic generators.
The new product, "TK055U60Z1" is the first 600V product in the DTMOSVI series and is housed in a TOLL package that allows Kelvin connection of its signal source terminal for the gate drive.
The influence of inductance in the source wire in the package can be reduced to accentuate the high-speed switching performance of the MOSFET, which suppresses oscillation during switching.
Toshiba will continue to expand its 600V DTMOSVI series line-up and its already released 650V DTMOSVI series products, and support energy conservation by reducing power loss in switching power supplies.
-- BERNAMA
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